| 发明名称 |
Stable, concentratable silicon wafer polishing composition and related methods |
| 摘要 |
A stable, concentratable silicon wafer polishing composition for polishing silicon wafers is provided, containing: water; an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, optionally, a pH adjusting agent; wherein the polishing composition exhibits a silicon removal rate of at least 300 nm/min. Also provided are methods of making and using the stabilized, concentratable chemical mechanical polishing composition. |
| 申请公布号 |
US8801959(B1) |
申请公布日期 |
2014.08.12 |
| 申请号 |
US201313860830 |
申请日期 |
2013.04.11 |
| 申请人 |
Rohm and Haas Electronic Materials CMP Holdings, Inc. |
发明人 |
Penta Naresh Kumar;Cook Lee Melbourne |
| 分类号 |
C09K13/00;C09G1/02;H01L21/306 |
主分类号 |
C09K13/00 |
| 代理机构 |
|
代理人 |
Deibert Thomas S. |
| 主权项 |
1. A stabilized, concentratable chemical mechanical polishing composition for polishing a silicon wafer, comprising:
water; an abrasive; a cation according to formula (I):wherein R1, R2, R3, R4 are independently selected from the group consisting of a hydrogen and a C1-10 alkyl group, a C1-10 aryl group, a C1-10 arylalkyl group and a C1-10 alkylaryl group; and,
piperazine or a piperazine derivative according to formula (II)wherein R5 is selected from the group consisting of a hydrogen, a C1-10 alkyl group, a C1-10 aryl group, a C1-10 arylalkyl group and a C1-10 alkylaryl group; and,
optionally, a pH adjusting agent; wherein the polishing composition exhibits a silicon removal rate of at least 300 nm/min. |
| 地址 |
Newark DE US |
