发明名称 Stacked semiconductor package
摘要 A stacked semiconductor package includes a plurality of semiconductor chips each including a substrate having one surface, the other surface which faces away from the one surface and side surfaces which connect the one surface and the other surface, through-silicon vias which pass through the one surface and the other surface of the substrate, repair pads which are exposed on the side surfaces of the substrate, and wiring lines which electrically connect the through-silicon vias with the repair pads, the plurality of semiconductor chips being stacked such that through-silicon vias of the semiconductor chips are connected with one another; and interconnections electrically connecting the repair pads of the semiconductor chips.
申请公布号 US8803325(B2) 申请公布日期 2014.08.12
申请号 US201213613983 申请日期 2012.09.13
申请人 SK Hynix Inc. 发明人 Kim Seong Cheol
分类号 H01L23/538 主分类号 H01L23/538
代理机构 William Park & Associates Patent Ltd. 代理人 William Park & Associates Patent Ltd.
主权项 1. A stacked semiconductor package comprising: a plurality of semiconductor chips each including a substrate having one surface, the other surface which faces away from the one surface and side surfaces which connect the one surface and the other surface, through-silicon vias which pass through the one surface and the other surface of the substrate, repair pads which are exposed on the side surfaces of the substrate, and wiring lines which electrically connect the through-silicon vias with the repair pads, the plurality of semiconductor chips being stacked such that through-silicon vias of the semiconductor chips are connected with one another; and interconnections electrically connecting the repair pads of the semiconductor chips; and conductive connection members formed between the through-silicon vias of the stacked semiconductor chips; and adhesive members formed between the stacked semiconductor chips.
地址 Gyeonggi-do KR