Dummy gate electrode of semiconductor device

摘要

The disclosure relates to a dummy gate electrode of a semiconductor device. An embodiment comprises a substrate comprising a first surface; an insulation region covering a portion of the first surface, wherein the top of the insulation region defines a second surface; and a dummy gate electrode over the second surface, wherein the dummy gate electrode comprises a bottom and a base broader than the bottom, wherein a ratio of a width of the bottom to a width of the base is from about 0.5 to about 0.9.

主权项

1. A semiconductor device comprising:
a substrate comprising a first surface; an insulation region covering a portion of the first surface; a gate electrode over the substrate, the gate electrode having a first base and a first bottom interposed between the first base and the substrate; a dummy gate electrode over the insulation region, the dummy gate electrode electrically isolated from other circuitry on the substrate, wherein the dummy gate electrode comprises a second bottom and a second base broader than the second bottom, wherein the second bottom is wider than the first bottom; and a dummy gate dielectric interposed between the dummy gate electrode and the insulation region.