Three dimensional memory and methods of forming the same

摘要

Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the memory device. The memory device also includes a second group of memory cells, each of the memory cells of the second group being formed in a cavity of a second control gate located in another device level of the memory device. Additional apparatus and methods are described.

主权项

1. An apparatus comprising:
a substrate of a memory device; a plurality of first memory cells located in a first device level of the memory device over the substrate; a plurality of second memory cells located in a second device level of the memory device over the first device level and over the substrate, wherein the first device level is different from the second device level; a first control gate formed in the first device level, the first control gate to control access to the first memory cells, wherein each of the first memory cells includes a memory element formed in a cavity of the first control gate; a second control gate formed in the second device level, the second control gate to control access to the second memory cells, wherein each of the second memory cells includes a memory element formed in a cavity of the second control gate; and data lines configured to be selectively coupled to a common source and the memory cells through conductive material.