发明名称 Reticles for use in forming implant masking layers and methods of forming implant masking layers
摘要 In one example, a reticle disclosed herein includes a body having a center, an arrangement of a plurality of exposure patterns, wherein a center of the arrangement is offset from the center of the body, and at least one open feature defined on or through the body of the reticle. In another example, a method is disclosed that includes forming a layer of photoresist above a plurality of functional die and a plurality of incomplete die, exposing the photoresist material positioned above at least one of the functional die and/or at least one of the incomplete die, performing an incomplete die exposure processes via an open feature of the reticle to expose substantially all of the photoresist material positioned above the plurality of incomplete die, and developing the photoresist to remove the portions of the photoresist material positioned above the incomplete die.
申请公布号 US8802360(B2) 申请公布日期 2014.08.12
申请号 US201213560012 申请日期 2012.07.27
申请人 GLOBALFOUNDRIES Inc. 发明人 Mazur Martin;Dietmar Henke;Thees Hans-Juergen
分类号 G03F7/20 主分类号 G03F7/20
代理机构 Amerson Law Firm, PLLC 代理人 Amerson Law Firm, PLLC
主权项 1. A method, comprising: forming a layer of photoresist material above a substrate comprised of a plurality of functional die and a plurality of incomplete die; performing a pattern transfer exposure process through an arrangement of multiple patterns on a reticle to transfer said patterns to a portion of a layer of photoresist material positioned above at least one of said functional die and/or at least one of said incomplete die; performing a plurality of incomplete die exposure processes via an open feature formed on or through said reticle to expose substantially all of said photoresist material positioned above said plurality of incomplete die; and after performing said pattern transfer exposure process and said plurality of incomplete die exposure processes, performing at least one photoresist development process to remove said portions of said photoresist material positioned above said plurality of incomplete die.
地址 Grand Cayman KY