Selected word line dependent select gate diffusion region voltage during programming

摘要

Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction.

主权项

1. A method of operating non-volatile storage having a plurality of NAND strings each having a plurality of non-volatile storage elements above a channel region, a first select transistor at a first end of the NAND string, and a second select transistor at a second end of the NAND string, the NAND strings being associated with a plurality of word lines, the first select transistor of each of the NAND strings having a first diffusion region on the side of the first select transistor that is furthest from the non-volatile storage elements of the respective NAND string, the second select transistor of each of the NAND strings having a second diffusion region on the side of the second select transistor that is furthest from the non-volatile storage elements of the respective NAND string the method comprising:
applying a voltage to the first diffusion region of at least one of the first select transistors, the magnitude of the voltage applied to the first diffusion region depends on the location of a selected word line on the plurality of NAND strings; and applying a program voltage to the selected word line while applying the voltage to the first diffusion region.