Superlattice quantum well infrared detector

摘要

In at least one embodiment, an infrared (IR) sensor comprising a thermopile is provided. The thermopile comprises a substrate and an absorber. The absorber is positioned above the substrate and a gap is formed between the absorber and the substrate. The absorber receives IR from a scene and generates an electrical output indicative of a temperature of the scene. The absorber is formed of a super lattice quantum well structure such that the absorber is thermally isolated from the substrate. In another embodiment, a method for forming an infrared (IR) detector is provided. The method comprises forming a substrate and forming an absorber with a plurality of alternating first and second layers with a super lattice quantum well structure. The method further comprises positioning the absorber about the substrate such that a gap is formed to cause the absorber to be suspended about the substrate.

主权项

1. An infrared (IR) sensor comprising:
a thermopile including:
a substrate;an absorber being positioned above the substrate and forming a gap thereof, the absorber being arranged to receive IR from a scene and to generate an electrical output indicative of a temperature of the scene, the absorber being formed of a superlattice quantum well structure including a plurality of alternating first and second layers such that the absorber is thermally isolated from the substrate;a first encapsulating layer;a second encapsulating layer, the plurality of alternating first and second layers being positioned between the first encapsulating layer and the second encapsulating layer to support the absorber over the gap; anda first arm positioned on a first side of the absorber and a second arm positioned on a second side of the absorber, wherein the first arm is formed of a first superlattice quantum well structure and the second arm is formed of a second superlattice quantum well structure such that the absorber is thermally isolated by the first arm and the second arm.