Semiconductor high-speed integrated electro-optic devices and methods

摘要

Novel integrated electro-optic structures such as modulators and switches and methods for fabrication of the same are disclosed in a variety of embodiments. In an illustrative embodiment, a device includes a substrate with a waveguide and an optical resonator comprising polycrystalline silicon positioned on the substrate. First and second doped semiconducting regions also comprise polycrystalline silicon and are positioned proximate to the first optical resonator. The first optical resonator is communicatively coupled to the waveguide.

主权项

1. A device comprising:
a substrate; a first waveguide comprising polycrystalline silicon positioned on the substrate; a first optical resonator comprising polycrystalline silicon positioned on the substrate, said first optical resonator communicatively coupled to said first waveguide; a first doped semiconducting region having a first doping concentration comprising polycrystalline silicon positioned proximate to the first optical resonator; and a second doped semiconducting region having a second doping concentration comprising polycrystalline silicon positioned proximate to the first optical resonator; and a third doped region disposed within said first optical resonator, said third doped region comprising a background doping and having a doping concentration less than said first doping concentration and less than said second doping concentration.