发明名称 |
Method, apparatus and system for providing improved full well capacity in an image sensor pixel |
摘要 |
Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle. |
申请公布号 |
US8804021(B2) |
申请公布日期 |
2014.08.12 |
申请号 |
US201113288880 |
申请日期 |
2011.11.03 |
申请人 |
OmniVision Technologies, Inc. |
发明人 |
Manabe Sohei;Ku Keh-Chiang;Venezia Vincent;Tai Hsin-Chih;Mao Duli;Rhodes Howard E. |
分类号 |
H04N3/14;H04N5/335 |
主分类号 |
H04N3/14 |
代理机构 |
Blakely Sokoloff Taylor & Zafman LLP |
代理人 |
Blakely Sokoloff Taylor & Zafman LLP |
主权项 |
1. An image sensor apparatus comprising:
a pixel array including:
a first pixel structure including:
a first photodiode in a semiconductor layer, the first photodiode including a first implant region and a second implant region at least partially overlapping the first implant region, the first implant region is skewed according to a first implant angle; anda first transfer gate adjoining a surface of the semiconductor layer; anda second pixel structure including a second transfer gate adjoining the surface of the semiconductor layer, wherein a boundary of the first implant region is aligned with a rim of the second transfer gate according to the first implant angle; and readout circuitry coupled to the pixel array, the readout circuitry to generate image data based on signals from the pixel array. |
地址 |
Santa Clara CA US |