发明名称 Top emission inverted organic light emitting diode display device having electrode patterns formed from a same material as a conductive pattern contacting the TFT
摘要 A top emission inverted OLED device is disclosed. The a top emission inverted OLED device includes: first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate; at least one thin film transistor formed on the light generation area; a passivation layer formed to cover the thin film transistor on the metal substrate and include contact holes which partially expose the thin film transistor and the first and second pad portions; a stacked pattern of first and second conductive patterns formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the contact holes; a cathode electrode formed on the light generation area and electrically connected to the second conductive pattern; an organic light emission layer disposed on the cathode electrode; an anode electrode disposed on the organic light emission layer and formed from a transparent metal material; and electrode patterns formed from the same material as the second conductive pattern on the rest of the contact holes which expose the first and second pad portions.
申请公布号 US8803172(B2) 申请公布日期 2014.08.12
申请号 US200912639414 申请日期 2009.12.16
申请人 LG Display Co., Ltd. 发明人 Kim Yong Chul;Yoo Juhn Suk
分类号 H01L27/32;H01L51/52 主分类号 H01L27/32
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A top-emission inverted organic light emitting diode display device, comprising: first and second pad portions disposed on peripheral areas which correspond to outer sides of a light generation area on a metal substrate; at least one thin film transistor formed on the light generation area; a passivation layer formed to cover the thin film transistor on the metal substrate and include primary contact holes which partially expose the thin film transistor and the first and second pad portions; a stacked pattern of first and second conductive patterns formed on the passivation layer and configured to make contact with the exposed part of the thin film transistor through one of the primary contact holes; a planarization layer formed on the passivation layer including the first and second conductive patterns; and a cathode electrode formed on the light generation area and electrically connected to the second conductive pattern, wherein the planarization layer includes secondary contact holes corresponding to the primary contact holes, wherein each of the first and second pad portions includes a first upper pad electrode formed from the same material as the first conductive pattern and a second upper pad electrode formed from the same material as the second conductive pattern on the first upper pad electrode, wherein the first upper pad electrodes are exposed through the secondary contact holes, and wherein the cathode electrode is formed on the planarization layer.
地址 Seoul KR