Semiconductor device and method of manufacturing the same

摘要

In one embodiment, a method of manufacturing a semiconductor device includes sequentially forming a first insulator, a second insulator, and a sacrificial layer on a semiconductor substrate, and forming plural core materials from the sacrificial layer and the second insulator. The method further includes forming first and second interconnects on side surfaces of each core material to form plural first interconnects and plural second interconnects alternately, each first interconnect having a first side surface in contact with a core material and a second side surface positioned on an opposite side of the first side surface, and each second interconnect having a third side surface in contact with a core material and a fourth side surface positioned on an opposite side of the third side surface. The method further includes removing the sacrificial layer so that the second insulator remains, after the first and second interconnects are formed.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
sequentially forming a first insulator, a second insulator, and a sacrificial layer on a semiconductor substrate; forming a plurality of core materials formed of the sacrificial layer and the second insulator; forming first and second interconnects on side surfaces of each of the core materials to form a plurality of first interconnects and a plurality of second interconnects alternately on the first insulator, each first interconnect having a first side surface in contact with one of the core materials and a second side surface positioned on an opposite side of the first side surface, and each second interconnect having a third side surface in contact with one of the core materials and a fourth side surface positioned on an opposite side of the third side surface; and removing the sacrificial layer so that the second insulator remains, after the first and second interconnects are formed.