| 发明名称 |
Barrier layer on bump and non-wettable coating on trace |
| 摘要 |
Some implementations provide a semiconductor device that includes a die, an under bump metallization (UBM) structure coupled to the die, and a barrier layer. The UBM structure has a first oxide property. The barrier layer has a second oxide property that is more resistant to oxide removal from a flux material than the first oxide property of the UBM structure. The barrier layer includes a top portion, a bottom portion and a side portion. The top portion is coupled to the UBM structure, and the side portion is substantially oxidized. |
| 申请公布号 |
US8802556(B2) |
申请公布日期 |
2014.08.12 |
| 申请号 |
US201313771524 |
申请日期 |
2013.02.20 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Bchir Omar J.;Shah Milind P.;Jomaa Houssam W.;Aldrete Manuel;Kim Chin-Kwan |
| 分类号 |
H01L21/44;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/44 |
| 代理机构 |
|
代理人 |
Gallardo Michelle S. |
| 主权项 |
1. A semiconductor device comprising:
a die; an under bump metallization (UBM) structure coupled to the die, the UBM structure having a first oxide property; and a barrier layer having a second oxide property that is more resistant to oxide removal from a flux material than the first oxide property of the UBM structure, the barrier layer comprising a top portion, a bottom portion and a side portion, the top portion coupled to the UBM structure, the side portion being substantially oxidized. |
| 地址 |
San Diego CA US |
