发明名称 |
Method for reducing body diode conduction in NMOS synchronous rectifiers |
摘要 |
A switching regulator that practices the current invention includes a high-side switch M1 connected between an input voltage and a node LX. A low-side switch is connected between the node LX and ground. An inductor L is connected between LX and an output node (VOUT). A filtering capacitor connects VOUT to ground. The switching regulator has two distinct operational phases. During the first operational phase, the high-side switch is OFF and the low-side switch is ON. During the second operational phase, the high-side switch is ON and the low-side switch acts as a current source. During transitions between the second and first operational phases, the low-side switch is controlled to momentarily decrease the regulated drain-to-source current. |
申请公布号 |
US8803494(B2) |
申请公布日期 |
2014.08.12 |
申请号 |
US200711835650 |
申请日期 |
2007.08.08 |
申请人 |
Advanced Analogic Technologies Incorporated |
发明人 |
D'Angelo Kevin;Wrathall Robert |
分类号 |
H02M3/156 |
主分类号 |
H02M3/156 |
代理机构 |
Lando & Anastasi, LLP |
代理人 |
Lando & Anastasi, LLP |
主权项 |
1. A method for operating a switching regulator, the switching regulator comprising a high-side switch and a low-side switch, the method comprising:
controlling the high-side switch to be substantially depleted during a first operational phase and to be substantially enhanced during a second operational phase; controlling the low-side switch to be substantially enhanced during the first operational phase and to provide a regulated drain-to-source current during the second operational phase; enabling a current mirror to generate a gate voltage for the low-side switch during the second operational phase; using, a drain voltage of a diode-connected N-channel MOSFET as the gate voltage of the low-side switch, a current source supplying the gate and drain of the N-channel MOSFET; and during transitions between the second and first operational phases, controlling the low-side switch to momentarily decrease the regulated drain-to-source current and providing an AC coupling between a voltage used to drive the high-side switch and the gate of the N-channel MOSEFT to momentarily decrease the low-side voltage. |
地址 |
Santa Clara CA US |