| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a first conductivity type base formed on a surface of a substrate, a second conductivity type emitter formed on a surface of the base, a second conductivity type doped region which, along with accepting a first type of carrier from the emitter, injects the first type of carrier into the base, and is arranged to be spaced apart on the surface of the base from the emitter, and a second conductivity type collector which is formed on an opposite side to the emitter and the doped region, interposing the base. | ||
| 申请公布号 | US8803244(B2) | 申请公布日期 | 2014.08.12 |
| 申请号 | US201213655873 | 申请日期 | 2012.10.19 |
| 申请人 | Sony Corporation | 发明人 | Mori Hideki |
| 分类号 | H01L27/088 | 主分类号 | H01L27/088 |
| 代理机构 | Dentons US LLP | 代理人 | Dentons US LLP |
| 主权项 | 1. A semiconductor device comprising: a first conductivity type base formed on a surface of a substrate; a second conductivity type emitter formed on a surface of the base; a second conductivity type doped region which, along with accepting a first type of carrier from the emitter, injects the first type of carrier into the base, and is arranged spaced apart on the surface of the base from the emitter; and a second conductivity type collector arranged on the surface of base with the doped region between the emitter and the second conductivity type collector. | ||
| 地址 | Tokyo JP | ||