Method for forming a PCRAM with low reset current

摘要

Phase-change memory structures are formed with ultra-thin heater liners and ultra-thin phase-change layers, thereby increasing heating capacities and lowering reset currents. Embodiments include forming a first interlayer dielectric (ILD) over a bottom electrode, removing a portion of the first ILD, forming a cell area, forming a u-shaped heater liner within the cell area, forming an interlayer dielectric structure within the u-shaped heater liner, the interlayer dielectric structure including a protruding portion extending above a top surface of the first ILD, forming a phase-change layer on side surfaces of the protruding portion and/or on the first ILD surrounding the protruding portion, and forming a dielectric spacer surrounding the protruding portion.

主权项

1. A method comprising:
forming a first interlayer dielectric (ILD) over a bottom electrode; removing a portion of the first ILD, forming a cell area; forming a u-shaped heater liner within the cell area; forming an interlayer dielectric structure within the u-shaped heater liner, the interlayer dielectric structure including a protruding portion extending above a top surface of the first ILD; forming a phase-change layer on side surfaces of the protruding portion and/or on the first ILD surrounding the protruding portion; and forming a dielectric spacer surrounding the protruding portion.