| 发明名称 | Semiconductor memory device and method of operating the same | ||
| 摘要 | A semiconductor memory device includes memory blocks that each include memory cells coupled to bit lines, a column masking circuit configured to output data change signals in response to an address signal indicating bit lines of selected columns among a plurality of columns, and an operation circuit configured to store data of the memory cells transferred through the bit lines and simultaneously change data transferred through the bit lines of the selected columns into operation pass data in response to the data change signals. | ||
| 申请公布号 | US8804391(B2) | 申请公布日期 | 2014.08.12 |
| 申请号 | US201213528204 | 申请日期 | 2012.06.20 |
| 申请人 | SK Hynix Inc. | 发明人 | Ahn Sung Hoon |
| 分类号 | G11C15/04;G11C15/00 | 主分类号 | G11C15/04 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor memory device, comprising: memory blocks that each include memory cells coupled to bit lines; a column masking circuit configured to output data change signals in response to an address signal indicating bit lines of selected columns among a plurality of columns; and an operation circuit configured to store data of the memory cells transferred through the bit lines and simultaneously change data transferred through the bit lines of the selected columns into operation pass data in response to the data change signals. | ||
| 地址 | Gyeonggi-do KR | ||