| 发明名称 | High resolution pixel architecture | ||
| 摘要 | A pixel structure comprises a substantially transparent substrate, a drive transistor formed on the substrate, an organic light emitting device formed on the opposite side of the drive transistor from the substrate, a reflective layer disposed between the light emitting device and the drive transistor and having a reflective surface facing the light emitting device. The reflective layer forms an opening offset from the drive transistor for passing light emitted by the light emitting device to the substrate. At least a portion of the reflective layer is preferably concave in shape to direct reflected light from the light emitting device back onto the light-emitting device. | ||
| 申请公布号 | US8803417(B2) | 申请公布日期 | 2014.08.12 |
| 申请号 | US201213724424 | 申请日期 | 2012.12.21 |
| 申请人 | Ignis Innovation Inc. | 发明人 | Chaji Gholamreza;Gupta Vasudha;Nathan Arokia |
| 分类号 | H01L33/00 | 主分类号 | H01L33/00 |
| 代理机构 | Nixon Peabody LLP | 代理人 | Nixon Peabody LLP |
| 主权项 | 1. A pixel structure comprising a substantially transparent substrate, a drive transistor formed on said substrate, an organic light emitting device formed on the opposite side of said drive transistor from said substrate, a reflective layer disposed between said light emitting device and said drive transistor and having a reflective surface facing said light emitting device, said reflective layer forming an opening offset from said drive transistor for passing light emitted by said light emitting device to said substrate, and at least a portion of the reflective layer is concave in shape to direct reflected light from said light emitting device back onto said light-emitting device. | ||
| 地址 | Waterloo, Ontario CA | ||