| 发明名称 | High voltage semiconductor device and method for fabricating the same | ||
| 摘要 | A high voltage (HV) semiconductor device includes: a semiconductor substrate having a first conductivity type; a gate structure disposed over a portion of the semiconductor substrate; a pair of spacers respectively disposed over a sidewall of the gate structure, wherein one of the spacers is a composite spacer comprising a first insulating spacer contacting the gate structure, a dummy gate structure, and a second insulating spacer; a first drift region disposed in a portion of the semiconductor, underlying a portion of the gate structure and one of the pair of spacers, having a second conductivity type opposite to the first conductivity type; and a pair of doping regions, respectively disposed in a portion of the semiconductor substrate on opposite sides of the gate structure, wherein the pair of doping regions include the second conductivity type and one of the doping regions is disposed in the first drift region. | ||
| 申请公布号 | US8803234(B1) | 申请公布日期 | 2014.08.12 |
| 申请号 | US201313846657 | 申请日期 | 2013.03.18 |
| 申请人 | Vanguard International Semiconductor Corporation | 发明人 | Liao Chih-Cherng;Wei Yun-Chou;Chuang Pi-Kuang;Hsu Ching-Yi;Lin Chih-Wei;Chen Wen-Chung;Chang Che-Hua;Chou Yung-Lung;Chou Chung-Te;Cho Cheng-Lun;Liang Ya-Han |
| 分类号 | H01L29/66;H01L21/4763;H01L29/423;H01L29/78 | 主分类号 | H01L29/66 |
| 代理机构 | Birch, Stewart, Kolasch & Birch, LLP | 代理人 | Birch, Stewart, Kolasch & Birch, LLP |
| 主权项 | 1. A high voltage (HV) semiconductor device, comprising: a semiconductor substrate having a first conductivity type; a gate structure disposed over a portion of the semiconductor substrate; a pair of spacers respectively disposed over a sidewall of the gate structure, wherein one of the spacers is a composite spacer comprising a first insulating spacer contacting the gate structure, a dummy gate structure, and a second insulating spacer; a first drift region disposed in a portion of the semiconductor, underlying a portion of the gate structure and one of the pair of spacers, having a second conductivity type opposite to the first conductivity type, wherein the first drift region physically contacts the first insulating spacer and the second insulating spacer of the composite spacer; and a pair of doping regions, respectively disposed in a portion of the semiconductor substrate on opposite sides of the gate structure, wherein the pair of doping regions comprise the second conductivity type and one of the doping regions is disposed in the first drift region. | ||
| 地址 | Hsinchu TW | ||