High electron mobility transistor and method of forming the same

摘要

A High Electron Mobility Transistor (HEMT) includes a first III-V compound layer having a first band gap, and a second III-V compound layer having a second band gap over the first III-V compound layer. The second band gap is greater than the first band gap. A crystalline interfacial layer is overlying and in contact with the second III-V compound layer. A gate dielectric is over the crystalline interfacial layer. A gate electrode is over the gate dielectric. A source region and a drain region are over the second III-V compound layer, and are on opposite sides of the gate electrode.

主权项

1. A High Electron Mobility Transistor (HEMT) comprising:
a first III-V compound layer having a first band gap; a second III-V compound layer having a second band gap over the first III-V compound layer, wherein the second band gap is greater than the first band gap; a crystalline interfacial layer over and in contact with the second III-V compound layer; a gate dielectric over the crystalline interfacial layer; a gate electrode over the gate dielectric; and a source region and a drain region over the second III-V compound layer and on opposite sides of the gate electrode.