Methods for hybrid wafer bonding

摘要

Methods for hybrid wafer bonding. In an embodiment, a method is disclosed that includes forming a metal pad layer in a dielectric layer over at least two semiconductor substrates; performing chemical mechanical polishing on the semiconductor substrates to expose a surface of the metal pad layer and planarize the dielectric layer to form a bonding surface on each semiconductor substrate; performing an oxidation process on the at least two semiconductor substrates to oxidize the metal pad layer to form a metal oxide; performing an etch to remove the metal oxide, recessing the surface of the metal pad layer from the bonding surface of the dielectric layer of each of the at least two semiconductor substrates; physically contacting the bonding surfaces of the at least two semiconductor substrates; and performing a thermal anneal to form bonds between the metal pads of the semiconductor substrates. Additional methods are disclosed.

主权项

1. A method, comprising:
forming a metal pad layer in a dielectric layer over at least two semiconductor substrates; performing chemical mechanical polishing on the semiconductor substrates to expose a surface of the metal pad layers and to planarize the dielectric layer to form a bonding surface on each semiconductor substrate; performing an oxidation process on the at least two semiconductor substrates to oxidize the metal pad layers to form a metal oxide; performing an etch to remove the metal oxide, exposing the surface of the metal pad layers from the bonding surface of the dielectric layer of each of the at least two semiconductor substrates; physically contacting the bonding surfaces of the at least two semiconductor substrates; and performing a thermal anneal to form bonds between the metal pad layers of the semiconductor substrates.