Vertical light emitting devices with nickel silicide bonding and methods of manufacturing

摘要

Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.

主权项

1. A method for manufacturing a lighting emitting device, comprising:
forming a light emitting structure; depositing a barrier material, a mirror material, and a bonding material on the light emitting structure, the bonding material containing nickel (Ni); placing the light emitting structure onto a silicon substrate with the nickel of the bonding material in direct contact with the silicon substrate; and bonding the light emitting structure and the silicon substrate via forming a nickel silicide (NiSi) material at an interface between the silicon substrate and the bonding material.