发明名称 Three-dimensional chip stack and method of forming the same
摘要 A three dimensional (3D) chip stack includes a first chip bonded to a second chip. The first chip includes a first bump structure overlying the first substrate, and the second chip includes a second bump structure overlying the second substrate. The first bump structure is attached to the second bump structure, and a joining region is formed between the first bump structure and the second bump structure. The joining region is a solderless region which includes a noble metal.
申请公布号 US8803333(B2) 申请公布日期 2014.08.12
申请号 US201213544746 申请日期 2012.07.09
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Yu Chen-Hua;Shih Da-Yuan;Tung Chih-Hang
分类号 H01L29/40;H01L23/48;H01L23/52;H01L23/488 主分类号 H01L29/40
代理机构 Lowe Hauptman & Ham, LLP 代理人 Lowe Hauptman & Ham, LLP
主权项 1. A device, comprising: a first chip comprising a first substrate and a first bump structure overlying the first substrate; and a second chip comprising a second substrate and a second bump structure overlying the second substrate, the first chip being bonded to the second chip by a solderless joint between the first bump structure and the second bump structure, the solderless joint having a joining region between the first bump structure and the second bump structure, wherein the joining region between the first chip and the second chip comprises a noble metal, the first bump structure comprises a metallization layer overlying the first substrate and a protection layer formed between the ioining region and the metallization layer, and a region between the first and the second chip is free from an adhesive material.
地址 TW