Dual damascene dual alignment interconnect scheme

摘要

A stack of a first metal line and a first dielectric cap material portion is formed within a line trench of first dielectric material layer. A second dielectric material layer is formed thereafter. A line trench extending between the top surface and the bottom surface of the second dielectric material layer is patterned. A photoresist layer is applied over the second dielectric material layer and patterned with a via pattern. An underlying portion of the first dielectric cap material is removed by an etch selective to the dielectric materials of the first and second dielectric material layer to form a via cavity that is laterally confined along the widthwise direction of the line trench and along the widthwise direction of the first metal line. A dual damascene line and via structure is formed, which includes a via structure that is laterally confined along two independent horizontal directions.

主权项

1. A metal interconnect structure comprising:
a dielectric material stack including at least a first dielectric material layer and a second dielectric material layer overlying said first dielectric material layer; a stack, from a bottom to a top, of a first metal line and a dielectric cap material portion, said stack located within said first dielectric material layer and wherein an upper surface of said dielectric cap material portion is coplanar with an upper surface of said first dielectric material layer; and a dual damascene line and via structure including a second metal line and a via structure, wherein said second metal line is embedded within said second dielectric material layer and said via structure is embedded within said first dielectric material layer, and wherein said second metal line is in direct contact with said via structure, and a bottom surface of said via structure is in direct physical contact with a portion of a top surface of said first metal line.