发明名称 High-frequency module and communication apparatus
摘要 A semiconductor component is face-up mounted on a package substrate. An antenna substrate is flip-chip mounted on a front side of the semiconductor component. A device-side high-frequency signal terminal is disposed on the front side of the semiconductor component, and an antenna-side high-frequency signal terminal is disposed on a back side of the antenna substrate. The device-side high-frequency signal terminal and the antenna-side high-frequency signal terminal are electrically connected to each other. Thus, the antenna substrate for high-frequency signals can be separated from the package substrate for baseband signals.
申请公布号 US8803315(B2) 申请公布日期 2014.08.12
申请号 US201313753370 申请日期 2013.01.29
申请人 Murata Manufacturing Co., Ltd. 发明人 Takizawa Koichi;Goto Yoshihiko;Sudo Kaoru;Fujii Hirotaka
分类号 H01L23/34 主分类号 H01L23/34
代理机构 Studebaker & Brackett PC 代理人 Studebaker & Brackett PC
主权项 1. A high-frequency module comprising: a package substrate formed of a dielectric material, the package substrate having substrate-side direct-current voltage terminals configured to output a direct-current voltage, substrate-side baseband signal terminals configured to input or output baseband signals, and external connection terminals for connection to an external circuit; a semiconductor component including a functional circuit unit having at least one of a function of modulating a baseband signal into a high-frequency signal and a function of demodulating a high-frequency signal into a baseband signal, device-side direct-current voltage terminals to which a direct-current voltage for driving is input, device-side baseband signal terminals configured to input or output baseband signals, and a device-side high-frequency signal terminal located on the same front side of the semiconductor component as the functional circuit unit and configured to input or output high-frequency signals; and an antenna substrate formed using a dielectric material, the antenna substrate having an antenna element on a front side thereof and an antenna-side high-frequency signal terminal on a back side thereof, the antenna-side high-frequency signal terminal being configured to input or output high-frequency signals, wherein the semiconductor component is face-up mounted on the package substrate with a back side thereof facing the package substrate, and the device-side direct-current voltage terminals and the device-side baseband signal terminals are electrically connected to the substrate-side direct-current voltage terminals and the substrate-side baseband signal terminals, respectively; and the antenna substrate is flip-chip mounted on the front side of the semiconductor component, and the antenna-side high-frequency signal terminal is electrically connected to the device-side high-frequency signal terminal on the front side of the semiconductor component.
地址 Kyoto-fu JP