发明名称 |
Random coded integrated circuit structures and methods of making random coded integrated circuit structures |
摘要 |
Randomized coded arrays and method of forming a randomized coded array. The methods include: forming a dielectric layer on a semiconductor substrate; forming an array of openings extending through the dielectric layer; introducing particles into a random set of less than all of the openings; and forming a conductive material in each opening of the array of openings, thereby creating the randomized coded array, wherein a first resistance of a pathway through the conductive material in openings containing the particles is different from a second resistance of a path through openings not containing the particles. Also, a physically unclonable function embodied in a circuit. |
申请公布号 |
US8803328(B1) |
申请公布日期 |
2014.08.12 |
申请号 |
US201313746427 |
申请日期 |
2013.01.22 |
申请人 |
International Business Machines Corporation |
发明人 |
Song Yunsheng;Wong Keith Kwong Hon;Xin Yongchun;Yang Zhijian |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
Schmeiser, Olsen & Watts |
代理人 |
Schmeiser, Olsen & Watts ;Steinberg William |
主权项 |
1. A method of forming a randomized coded array, comprising:
forming a dielectric layer on a semiconductor substrate; forming an array of openings extending through said dielectric layer; introducing particles into a random set of less than all of said openings; and forming a conductive material in each opening of said array of openings, thereby creating said randomized coded array, wherein a first resistance of a pathway through said conductive material in openings containing said particles is different from a second resistance of a path through openings not containing said particles. |
地址 |
Armonk NY US |