发明名称 |
High temperature operating package and circuit design |
摘要 |
The invention provides a semiconductor device that is thermally isolated from the printed circuit board such that the device operates at a higher temperature and radiates heat away from the printed circuit board. In another embodiment, the semiconductor is stacked onto a second device and optionally thermally isolated from the second device. |
申请公布号 |
US8803239(B2) |
申请公布日期 |
2014.08.12 |
申请号 |
US201113221179 |
申请日期 |
2011.08.30 |
申请人 |
Fairchild Semiconductor Corporation |
发明人 |
Thornton Neill;Lang Dennis |
分类号 |
H01L21/70;H01L27/11;H01L21/02;H01L29/417;H01L29/45 |
主分类号 |
H01L21/70 |
代理机构 |
Christensen O'Connor Johnson Kindness PLLC |
代理人 |
Christensen O'Connor Johnson Kindness PLLC |
主权项 |
1. A circuit comprising:
a high temperature power device having a first source region, a first gate region and a first drain region; a series power device having a second source region, a second gate region and a second drain region, the second source region facing the first drain region; and a thermal resistance layer between the high temperature power device and the series power device, the thermal resistance layer providing an electrical connection between the first drain and the second source. |
地址 |
San Jose CA US |