发明名称 High temperature operating package and circuit design
摘要 The invention provides a semiconductor device that is thermally isolated from the printed circuit board such that the device operates at a higher temperature and radiates heat away from the printed circuit board. In another embodiment, the semiconductor is stacked onto a second device and optionally thermally isolated from the second device.
申请公布号 US8803239(B2) 申请公布日期 2014.08.12
申请号 US201113221179 申请日期 2011.08.30
申请人 Fairchild Semiconductor Corporation 发明人 Thornton Neill;Lang Dennis
分类号 H01L21/70;H01L27/11;H01L21/02;H01L29/417;H01L29/45 主分类号 H01L21/70
代理机构 Christensen O'Connor Johnson Kindness PLLC 代理人 Christensen O'Connor Johnson Kindness PLLC
主权项 1. A circuit comprising: a high temperature power device having a first source region, a first gate region and a first drain region; a series power device having a second source region, a second gate region and a second drain region, the second source region facing the first drain region; and a thermal resistance layer between the high temperature power device and the series power device, the thermal resistance layer providing an electrical connection between the first drain and the second source.
地址 San Jose CA US
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