Nonvolatile memory device and method for fabricating the same

摘要

A nonvolatile memory device includes a floating gate formed over a semiconductor substrate, an insulator formed on a first sidewall of the floating gate, a dielectric layer formed on a second sidewall and an upper surface of the floating gate, and a control gate formed over the dielectric layer.

主权项

1. A nonvolatile memory device comprising:
a plurality of floating gates formed over a semiconductor substrate; an insulator formed on a first sidewall of the plurality of floating gates; a dielectric layer formed on a second sidewall and an upper surface of the plurality of floating gates; and a control gate formed over the dielectric layer, wherein the plurality of floating gates have the same critical dimension, and spaces, which are alternately provided between the plurality of floating gates, have different critical dimension.