Semiconductor device having under-bump metallization (UBM) structure and method of forming the same

摘要

A semiconductor device comprises a semiconductor substrate, an under-bump metallization (UBM) structure overlying the semiconductor substrate, and a solder bump overlying and electrically connected to the UBM structure. The UBM structure comprises a copper-containing metallization layer, a nickel-containing metallization layer, and a first intermetallic compound (IMC) layer between the copper-containing metallization layer and the nickel-containing metallization layer. The first IMC layer is in direct contact with the copper-containing metallization layer and the nickel-containing metallization layer.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; an under-bump metallization (UBM) structure overlying the semiconductor substrate; and a solder bump overlying and electrically connected to the UBM structure; wherein the UBM structure comprises:
a copper-containing metallization layer,a nickel-containing metallization layer, anda first intermetallic compound (IMC) layer between the copper-containing metallization layer and the nickel-containing metallization layer, the first IMC layer in direct contact with the copper-containing metallization layer and the nickel-containing metallization layer.