发明名称 |
Semiconductor devices and methods of manufacturing the same |
摘要 |
A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines. |
申请公布号 |
US8803324(B2) |
申请公布日期 |
2014.08.12 |
申请号 |
US201213602101 |
申请日期 |
2012.09.01 |
申请人 |
SK Hynix Inc. |
发明人 |
Lee Young Jin |
分类号 |
H01L21/48 |
主分类号 |
H01L21/48 |
代理机构 |
William Park & Associates Patent Ltd. |
代理人 |
William Park & Associates Patent Ltd. |
主权项 |
1. A semiconductor device, comprising:
a first interlayer insulating layer; an etch stop layer formed on the first interlayer insulating layer; contact holes formed to penetrate the etch stop layer and the first interlayer insulating layer; contact plugs formed in the respective contact holes and configured to have a top surface lower than a top surface of the etch stop layer; a second interlayer insulating layer formed over the contact plugs and the etch stop layer; line trenches formed to penetrate the second interlayer insulating layer, wherein the respective contact plugs are exposed in the line trenches; and lines formed in the trenches and coupled to the respective contact plugs, wherein a difference A between a height of the top surface of the contact plugs and the height of the top surface of the etch stop layer is determined on condition that a distance D between the contact plug and the lines adjacent to each other is a critical distance k or higher, wherein the critical distance k is a distance that does not generate a leakage current between the contact plug and the lines adjacent to each other. |
地址 |
Gyeonggi-do KR |