Electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and thin film resistor and method of manufacturing the same

摘要

An electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and an integrated circuit back end thin film resistor and a method of manufacturing the same is provided. The semiconductor structure comprises a first dielectric layer, a bottom plate of the capacitor and a thin film resistor body. Furthermore, there is a second dielectric layer which is disposed on the bottom plate of the capacitor and on top of the thin film resistor body. A top plate of the capacitor is disposed on the second dielectric layer in a region of the second dielectric layer which is defined by the lateral dimensions of the bottom plate of the capacitor. The bottom plate and the resistor body are laterally spaced apart layers which are both disposed on the first dielectric layer and which are composed of a same thin film material.

主权项

1. An electronic device comprising a semiconductor structure having an integrated circuit back end capacitor and an integrated circuit back end thin film resistor, the semiconductor structure comprising:
a first dielectric layer; a bottom plate of the capacitor and a thin film resistor body; a second dielectric layer disposed on the bottom plate of the capacitor and on the thin film resistor body and a top plate of the capacitor disposed on the second dielectric layer in a region of the second dielectric layer which is defined by the lateral dimensions of the bottom plate of the capacitor, wherein the bottom plate and the resistor body are laterally spaced apart layers which are both disposed on the first dielectric layer and which are composed of a same thin film material; wherein the first dielectric layer is deposited on a first metallization layer of the semiconductor structure; wherein the thin film material for the bottom plate of the capacitor and for the thin film resistor body is composed of SiCr, the second dielectric layer is composed of silicon nitride and the top plate of the capacitor is composed of titanium nitride.