| 发明名称 | Magnetic memory layer and magnetic memory device including the same | ||
| 摘要 | A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a <002> crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the <002> crystal direction with respect to a surface of the second seed layer. | ||
| 申请公布号 | US8803265(B2) | 申请公布日期 | 2014.08.12 |
| 申请号 | US201113170870 | 申请日期 | 2011.06.28 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Lim Woo-chang;Kim Young-hyun;Jeong Jun-ho;Shin Hee-ju |
| 分类号 | H01L29/82 | 主分类号 | H01L29/82 |
| 代理机构 | Lee & Morse, P.C. | 代理人 | Lee & Morse, P.C. |
| 主权项 | 1. A magnetic memory layer, comprising: a base layer; a first seed layer on the base layer; a second seed layer above and directly on the first seed layer, the second seed layer having a body centered cubic (BCC) crystal structure grown according to a <002> crystal direction with respect to a surface of the first seed layer thereunder; and a main magnetic layer on the second seed layer, wherein the main magnetic layer is grown according to the <002> crystal direction with respect to a surface of the second seed layer thereunder and wherein the first seed layer has a property to change a surface energy between the base layer and second seed layer to increase growth of the second seed layer in the <002> crystal direction. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||