发明名称 | Plasma-induced damage (PID) protective diode in an open region of a well guard to increase the degree of integration of transustor of semiconductor device | ||
摘要 | To increase the integration degree of a semiconductor device, the semiconductor device having a Plasma-Induced Damage (PID) protective diode includes a well, at least a first transistor region formed over the well, a gate electrode formed over the first transistor region, a well guard disposed to include an open region while surrounding the first transistor region, a diode disposed in the open region, and a metal line configured to electrically connect the gate electrode and the diode. A space between transistor regions may be efficiently reduced, thus increasing the integration degree of a semiconductor device. | ||
申请公布号 | US8803238(B2) | 申请公布日期 | 2014.08.12 |
申请号 | US201113280729 | 申请日期 | 2011.10.25 |
申请人 | Hynix Semiconductor Inc. | 发明人 | Kim Yong-Ho |
分类号 | H01L23/62;H01L27/02;H01L29/06 | 主分类号 | H01L23/62 |
代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
主权项 | 1. A semiconductor device, comprising: a well; at least a first transistor region formed over the well; a gate electrode formed over the first transistor region; a well guard including an open region and surrounding the first transistor region; a diode disposed in the open region; and a metal line configured to electrically connect the gate electrode and the diode. | ||
地址 | Gyeonggi-do KR |