Junctionless transistor

摘要

A transistor includes a semiconductor layer, and a gate dielectric is formed on the semiconductor layer. A gate conductor is formed on the gate dielectric and an active area is located in the semiconductor layer underneath the gate dielectric. The active area includes a graded dopant region that has a higher doping concentration near a top surface of the semiconductor layer and a lower doping concentration near a bottom surface of the semiconductor layer. This graded dopant region has a gradual decrease in the doping concentration. The transistor also includes source and drain regions that are adjacent to the active region. The source and drain regions and the active area have the same conductivity type.

主权项

1. A transistor comprising:
a semiconductor layer; a gate dielectric formed on the semiconductor layer; a gate conductor formed on the gate dielectric; an active area in the semiconductor layer underneath the gate dielectric, the active area comprising a graded dopant region that is doped with a first conductivity type dopant, the graded dopant region being heavily doped with a graded profile, such that there is a heavy dopant concentration near a top surface of the semiconductor layer that gradually decreases to a lower dopant concentration near a bottom surface of the semiconductor layer; and source and drain regions adjacent to the active area, the source and drain regions being heavily doped with the first conductivity type dopant, wherein the source and drain regions and the active area have the same conductivity type, the semiconductor layer consists of a single layer of a semiconducting material, and the active area, the source region, and the drain region are all located in the semiconductor layer.