SONOS device and method for fabricating the same

摘要

An improved semiconductor device is provided whereby the semiconductor device is defined by a layered structure comprising a first dielectric layer, a data storage material disposed on the first dielectric layer, and a second dielectric layer disposed on the data storage material, the layered structured substantially forming the outer later of the semiconductor device. For example, the semiconductor device may be a SONOS structure having an oxide-nitride-oxide (ONO) film that substantially surrounds the SONOS structure. The invention also provides methods for fabricating the semiconductor device and the SONOS structure of the invention.

主权项

1. A semiconductor device comprising:
a substrate; a dielectric layer disposed on the substrate, the dielectric layer having an undercut region; a conductive layer disposed on the dielectric layer, the conductive layer having a sidewall; and a charge trapping film substantially surrounding the dielectric layer and the sidewall of the conductive layer, wherein a portion of the substrate and conductive layer are removed to form the undercut region.