| 发明名称 |
Transistor including reentrant profile |
| 摘要 |
A transistor includes a substrate, an electrically conductive material layer, and an electrically insulating material layer. At least a portion of one or more of the substrate, the electrically conductive material layer, and the electrically insulating material layer define a reentrant profile. |
| 申请公布号 |
US8803203(B2) |
申请公布日期 |
2014.08.12 |
| 申请号 |
US201012713264 |
申请日期 |
2010.02.26 |
| 申请人 |
Eastman Kodak Company |
发明人 |
Tutt Lee W.;Nelson Shelby F. |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
Zimmerli William R. |
| 主权项 |
1. A transistor comprising:
a substrate; an electrically conductive material layer; and an electrically insulating material layer, the electrically conductive material layer being positioned between the substrate and the electrically insulating material layer, wherein the electrically insulating material layer extends beyond and overhangs the electrically conductive material layer such that the electrically insulating material layer and the electrically conductive material layer define a reentrant profile. |
| 地址 |
Rochester NY US |
