Bottom and top gate organic transistors with fluropolymer banked crystallization well

摘要

A method is provided for fabricating a printed organic thin film transistor (OTFT) with a patterned organic semiconductor using a fluropolymer banked crystallization well. In the case of a bottom gate OTFT, a substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode, and source (S) and drain (D) electrodes are formed overlying the gate dielectric. A gate dielectric OTFT channel interface region is formed between the S/D electrodes. A well with fluropolymer containment and crystallization banks is then formed, to define an organic semiconductor print area. The well is filled with an organic semiconductor, covering the S/D electrodes and the gate dielectric OTFT channel interface. Then, the organic semiconductor is crystallized. Predominant crystal grain nucleation originates from regions overlying the S/D electrodes. As a result, an organic semiconductor channel is formed, interposed between the S/D electrodes.

主权项

1. A bottom gate organic thin film transistor (OTFT) with a fluropolymer banked crystallization well, the OTFT comprising:
a substrate; a gate electrode overlying the substrate; gate dielectric overlying the gate electrode; source (S) and drain (D) electrodes overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes; a well with fluropolymer containment and crystallization banks forming a print area surrounding the gate dielectric channel interface; and, a crystallized organic semiconductor layer with a channel overlying the gate dielectric channel interface.