| 发明名称 | Surface treatment method for a mask blank, method of manufacturing a mask blank, and method of manufacturing a mask | ||
| 摘要 | Provided is a mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate. The thin film is made of a material that can be etched by ion-based dry etching. The concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less. | ||
| 申请公布号 | US8802334(B2) | 申请公布日期 | 2014.08.12 |
| 申请号 | US201213440539 | 申请日期 | 2012.04.05 |
| 申请人 | Hoya Corporation | 发明人 | Yamada Takeyuki;Suzuki Toshiyuki;Hashimoto Masahiro;Yokoya Yasunori |
| 分类号 | G03F1/00 | 主分类号 | G03F1/00 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate, wherein the thin film is made of a material containing tantalum, the thin film comprises a surface layer made of a material containing tantalum and oxygen, the surface layer is treated with the treatment liquid in surface treatment of the thin film, the treatment liquid contains etching inhibitor, and a concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less. | ||
| 地址 | Tokyo JP | ||