发明名称 |
Method for evaluating metal contamination of silicon single crystal |
摘要 |
A method for evaluating metal contamination of a silicon single crystal grown by the Czochralski method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible comprises the steps of: setting the crystal suspending member as a negative electrode while setting the crucible as a positive electrode in a process for growing a non-convertible portion of the silicon single crystal; applying the voltage; collecting a sample from the non-convertible portion grown in association with the voltage application; and evaluating the metal contamination of the sample by an analysis in which Surface Photo Voltage method is adopted. In a process for growing an end-product convertible portion of the silicon single crystal, the voltage is applied such that the crystal suspending member is set as the positive electrode while the crucible is set as the negative electrode, or the voltage is not applied. |
申请公布号 |
US8801854(B2) |
申请公布日期 |
2014.08.12 |
申请号 |
US201313913732 |
申请日期 |
2013.06.10 |
申请人 |
Sumco Corporation |
发明人 |
Kuragaki Shunji |
分类号 |
C30B11/00;C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B11/00 |
代理机构 |
Clark & Brody |
代理人 |
Clark & Brody |
主权项 |
1. A method for evaluating metal contamination of a silicon single crystal grown by the Czochoralski method using a pulling apparatus in which a voltage can be applied between a crystal suspending member and a crucible, the method comprising the steps of:
setting the crystal suspending member as a negative electrode while setting the crucible as a positive electrode in a process for growing a non-convertible portion of the silicon single crystal; applying the voltage; collecting a sample from the non-convertible portion grown in association with the voltage application; and evaluating the metal contamination of the sample by an analysis in which Surface Photo Voltage method (SPV method) is adopted; wherein, in a process for growing an end-product convertible portion of the silicon single crystal, the voltage is applied under the condition that the crystal suspending member is set as the positive electrode while the crucible is set as the negative electrode, or the voltage is not applied. |
地址 |
Tokyo JP |