Manufacturing method of solid-state image pickup device and solid-state image pickup device

摘要

In a manufacturing method of a solid-state image pickup device according to an embodiment, a transfer gate electrode is formed in a predetermined position on an upper surface of a first conductive semiconductor area, through a gate insulating film. A second conductive charge storage area is formed in an area adjacent to the transfer gate electrode in the first conductive semiconductor area. A sidewall is formed on a side surface of the transfer gate electrode. An insulating film is formed to extend from a circumference surface of the sidewall on a side of the charge storage area to a position partially covering the upper part of the charge storage area. A first conductive charge storage layer is formed in the charge storage area by implanting first conductive impurities from above, into the charge storage area which is partially covered with the insulating film.

主权项

1. A manufacturing method of a solid-state image pickup device, comprising:
forming a transfer gate electrode which transfers charges photoelectrically converted by a photoelectric conversion device, in a predetermined position on an upper surface of a first conductive semiconductor area through a gate insulating film; forming a second conductive semiconductor area for storing the charges photoelectrically converted by the photoelectric conversion device, in an area adjacent to the transfer gate electrode in the first conductive semiconductor area; forming a sidewall on a side surface of the transfer gate electrode; forming an insulating film which extends from a circumference surface of the sidewall on a side of a charge storage area to a position covering a part of an upper part of the charge storage area; and forming a first conductive charge storage layer on an upper surface part of the charge storage area by implanting first conductive impurities from above into the charge storage area whose upper part is partially covered with the insulating film; wherein the first conductive charge storage layer has different depths with a shallower depth in a portion closer to the transfer gate electrode than in a portion away from the transfer gate electrode.