发明名称 |
Circuit structure and manufacturing method thereof |
摘要 |
A manufacturing method of a circuit structure is provided. A metal layer having an upper surface is provided. A surface passivation layer is formed on the metal layer. The surface passivation layer exposes a portion of the upper surface of the metal layer, and a material of the metal layer is different from a material of the surface passivation layer. A covering layer is formed on the surface passivation layer, and the covering layer covers the surface passivation layer. |
申请公布号 |
US8803295(B2) |
申请公布日期 |
2014.08.12 |
申请号 |
US201213371459 |
申请日期 |
2012.02.12 |
申请人 |
Subtron Technology Co., Ltd. |
发明人 |
Chen Ching-Sheng |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
Jianq Chyun IP Office |
代理人 |
Jianq Chyun IP Office |
主权项 |
1. A circuit structure comprising:
a metal layer having an upper surface; a surface passivation layer located on the upper surface of the metal layer, the surface passivation layer exposing a portion of the upper surface of the metal layer, a material of the metal layer being different from a material of the surface passivation layer; and a covering layer located on the surface passivation layer, the covering layer covering the surface passivation layer, wherein a material of the covering layer comprises an organic material, and the organic material comprises mercaptan nano-polymer or hydroxypropyl-beta-cyclodextrin. |
地址 |
Hsinchu County TW |