发明名称 Circuit structure and manufacturing method thereof
摘要 A manufacturing method of a circuit structure is provided. A metal layer having an upper surface is provided. A surface passivation layer is formed on the metal layer. The surface passivation layer exposes a portion of the upper surface of the metal layer, and a material of the metal layer is different from a material of the surface passivation layer. A covering layer is formed on the surface passivation layer, and the covering layer covers the surface passivation layer.
申请公布号 US8803295(B2) 申请公布日期 2014.08.12
申请号 US201213371459 申请日期 2012.02.12
申请人 Subtron Technology Co., Ltd. 发明人 Chen Ching-Sheng
分类号 H01L21/00 主分类号 H01L21/00
代理机构 Jianq Chyun IP Office 代理人 Jianq Chyun IP Office
主权项 1. A circuit structure comprising: a metal layer having an upper surface; a surface passivation layer located on the upper surface of the metal layer, the surface passivation layer exposing a portion of the upper surface of the metal layer, a material of the metal layer being different from a material of the surface passivation layer; and a covering layer located on the surface passivation layer, the covering layer covering the surface passivation layer, wherein a material of the covering layer comprises an organic material, and the organic material comprises mercaptan nano-polymer or hydroxypropyl-beta-cyclodextrin.
地址 Hsinchu County TW