发明名称 Light sensor having IR cut and color pass interference filter integrated on-chip
摘要 A light sensor is described that includes an IR interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are disposed proximate to the surface of the substrate. An IR interference filter is disposed over the photodetectors. The IR interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photo detectors.
申请公布号 US8803270(B2) 申请公布日期 2014.08.12
申请号 US201314044299 申请日期 2013.10.02
申请人 Maxim Integrated Products, Inc. 发明人 Holenarsipur Prashanth;Wang Zhihai;Kerness Nicole D.
分类号 H01L31/0216 主分类号 H01L31/0216
代理机构 Advent, LLP 代理人 Advent, LLP
主权项 1. A light sensor comprising: a substrate having a surface; a plurality of photodetectors disposed proximate to the surface, each of the plurality of photodetectors configured to detect light and to provide a signal in response thereto; an IR cut interference filter disposed over the surface and configured to filter infrared light to at least substantially block infrared light from reaching the plurality of photodetectors; at least one color interference filter disposed proximate to the IR cut interference filter, the at least one color interference filter configured to filter visible light to pass light in a limited spectrum of wavelengths to at least one photodetector of the plurality of photodetectors; and a dark mirror disposed about a periphery of the IR cut interference filter, the dark mirror configured to at least substantially eliminate impingement of light that does not pass through the IR cut interference filter onto the plurality of photodetectors.
地址 San Jose CA US