Metal-oxide-semiconductor field-effect transistor and method for manufacturing the same

摘要

A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) is disclosed. The MOSFET includes a substrate, a well region formed in the substrate, a shallow channel layer, a channel, a gate oxide layer, a gate region, a source region, and a drain region. The shallow channel layer is formed on a portion of the well region and includes a first shallow channel region and a second shallow channel region. The channel is arranged between the first shallow channel region and the second shallow channel region and connects the first shallow channel region and the second shallow channel region. Further, the gate oxide layer is formed on a portion of the well region between the first shallow channel region and the second shallow channel region and includes a first gate oxide region and a second gate oxide region arranged on different sides of the channel. The gate region is formed on the channel and the gate oxide layer; the source region is formed in the first shallow channel region and vertically extends into the well region under the first shallow channel region; and the drain region is formed in the second shallow channel region and vertically extends into the well region under the second shallow channel region.

主权项

1. A Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), comprising:
a substrate; a well region formed in the substrate; a shallow channel layer formed on a portion of the well region and including a first shallow channel region and a second shallow channel region; a channel arranged between the first shallow channel region and the second shallow channel region and connecting the first shallow channel region and the second shallow channel region; a gate oxide layer formed on a portion of the well region between the first shallow channel region and the second shallow channel region and including a first gate oxide region and a second gate oxide region arranged on different sides of the channel; a gate region formed on the channel and the gate oxide layer; a source region formed in the first shallow channel region and vertically extending into the well region under the first shallow channel region; and a drain region formed in the second shallow channel region and vertically extending into the well region under the second shallow channel region.