发明名称 |
Optical device processing method |
摘要 |
An optical device wafer has a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices, each optical device having electrodes formed on the front side. A processing method includes: forming a groove on a back side of the wafer along each division line so as to form a slightly remaining portion on the front side of the wafer along each division line; forming a reflective film on the back side of the wafer to thereby form the reflective film on at least side surfaces of the groove; grinding the back side of the wafer to thereby reduce the thickness of the wafer to a finished thickness; and cutting the slightly remaining portion along each division line to thereby divide the wafer into individual optical device chips. |
申请公布号 |
US8802463(B2) |
申请公布日期 |
2014.08.12 |
申请号 |
US201313909333 |
申请日期 |
2013.06.04 |
申请人 |
Disco Corporation |
发明人 |
Sekiya Kazuma |
分类号 |
H01L33/60;H01L21/00 |
主分类号 |
H01L33/60 |
代理机构 |
Greer Burns & Crain, Ltd. |
代理人 |
Greer Burns & Crain, Ltd. |
主权项 |
1. An optical device processing method for processing an optical device wafer having a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices, each of the optical devices having electrodes formed on the front side, the optical device processing method comprising:
a groove forming step of forming a groove on a back side of the optical device wafer along each division line so as to form a slightly remaining portion on the front side of the optical device wafer along each division line; a reflective film forming step of forming a reflective film on the back side of the optical device wafer after performing the groove forming step, thereby forming the reflective film on at least side surfaces of the groove; a grinding step of grinding the back side of the optical device wafer after performing the reflective film forming step, thereby reducing the thickness of the optical device wafer to a finished thickness; and a dividing step of cutting the slightly remaining portion along each division line after performing the grinding step, thereby dividing the optical device wafer into individual optical device chips. |
地址 |
Tokyo JP |