发明名称 Optical device processing method
摘要 An optical device wafer has a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices, each optical device having electrodes formed on the front side. A processing method includes: forming a groove on a back side of the wafer along each division line so as to form a slightly remaining portion on the front side of the wafer along each division line; forming a reflective film on the back side of the wafer to thereby form the reflective film on at least side surfaces of the groove; grinding the back side of the wafer to thereby reduce the thickness of the wafer to a finished thickness; and cutting the slightly remaining portion along each division line to thereby divide the wafer into individual optical device chips.
申请公布号 US8802463(B2) 申请公布日期 2014.08.12
申请号 US201313909333 申请日期 2013.06.04
申请人 Disco Corporation 发明人 Sekiya Kazuma
分类号 H01L33/60;H01L21/00 主分类号 H01L33/60
代理机构 Greer Burns & Crain, Ltd. 代理人 Greer Burns & Crain, Ltd.
主权项 1. An optical device processing method for processing an optical device wafer having a plurality of optical devices formed on a front side and a plurality of crossing division lines for partitioning the optical devices, each of the optical devices having electrodes formed on the front side, the optical device processing method comprising: a groove forming step of forming a groove on a back side of the optical device wafer along each division line so as to form a slightly remaining portion on the front side of the optical device wafer along each division line; a reflective film forming step of forming a reflective film on the back side of the optical device wafer after performing the groove forming step, thereby forming the reflective film on at least side surfaces of the groove; a grinding step of grinding the back side of the optical device wafer after performing the reflective film forming step, thereby reducing the thickness of the optical device wafer to a finished thickness; and a dividing step of cutting the slightly remaining portion along each division line after performing the grinding step, thereby dividing the optical device wafer into individual optical device chips.
地址 Tokyo JP