Charge reservoir structure

摘要

The present invention relates to a process for preparing semiconductor-on-insulator type structures that include a semiconductor layer of a donor substrate, an insulator layer and a receiver substrate. The process includes bonding of the donor substrate onto the receiver substrate, with at least one of the substrates being coated with an insulator layer, and forming at the bonding interface a so-called trapping interface of electrically active traps suitable for retaining charge carriers. The invention also relates to a semiconductor-on-insulator type structure that includes such a trapping interface.

主权项

1. A process for preparing a semiconductor-on-insulator (SeOI) type structure that includes a semiconductor layer of a donor substrate, an insulator layer and a semiconductor receiver substrate, which process comprises:
bonding of the donor substrate to the receiver substrate, with one of the substrates being provided on its bonding surface with an insulator layer for contacting the bonding surface of the other substrate at a bonding interface, and forming at the bonding interface a trapping interface comprising electrically active defects which act as traps for retaining charge carriers, with the bonding surfaces on either side of the trapping interface being in direct contact and not separated by a continuous surface, wherein the trapping interface has a contaminant concentration of between 1012 and 1015 atoms/cm2; wherein the electrically active defects are formed on the surface of the other substrate prior to bonding; wherein defects forming the trapping interface are located at a certain constant depth (Z) within the SeOI-type substrate, and wherein the defects are obtained by a treatment comprising depositing contaminants on at least one of the bonding surfaces, and the treatment comprises a heat treatment in an environment containing the contaminants, wherein the contaminants include germanium atoms.