发明名称 ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 In an organic thin film transistor (TFT) substrate, the organic TFT substrate includes gate lines, data lines, a gate electrode, a source electrode, a drain electrode, a gate insulating layer, an organic semiconductor layer, and an organic protective layer. The gate and data lines are insulated from each other and cross each other to define pixel areas. The gate electrode is connected to the gate line. The source electrode is connected to the data line. The drain electrode faces the source electrode with the gate electrode disposed therebetween. The gate insulating layer covers the gate electrode and exposes a portion of the source and drain electrodes. The organic semiconductor layer contacts the source and drain electrodes. The organic protective layer is disposed on the organic semiconductor layer to protect the organic semiconductor layer.
申请公布号 KR101427707(B1) 申请公布日期 2014.08.11
申请号 KR20080015830 申请日期 2008.02.21
申请人 发明人
分类号 G02F1/136;H01L29/786 主分类号 G02F1/136
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