发明名称 |
NANOWIRE STRUCTURES HAVING WRAP-AROUND CONTACTS |
摘要 |
Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of the channel region. A pair of source and drain regions is disposed in the nanowire, on either side of the channel region. Each of the source and drain regions has a perimeter orthogonal to the length of the channel region. A first contact completely surrounds the perimeter of the source region. A second contact completely surrounds the perimeter of the drain region. |
申请公布号 |
KR20140099306(A) |
申请公布日期 |
2014.08.11 |
申请号 |
KR20147018009 |
申请日期 |
2011.12.23 |
申请人 |
INTEL CORP. |
发明人 |
CEA STEPHEN M.;WEBER CORY E.;KEYS PATRICK H.;KIM, SEI YON;HAVERTY MICHAEL G.;SHANKAR SADASIVAN |
分类号 |
H01L21/28;H01L21/336;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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