| 发明名称 |
SEMICONDUCTOR DEVICE WITH IMPROVED HEAT DISSIPATION PROPERTY |
| 摘要 |
The present invention relates to a semiconductor device and, more specifically, to a semiconductor device with improved heat dissipation properties, capable of effectively emitting heat generated inside a three-dimensional layered semiconductor device to the outside of the semiconductor device by using an internal connector used in bonding. |
| 申请公布号 |
KR101428754(B1) |
申请公布日期 |
2014.08.11 |
| 申请号 |
KR20130054090 |
申请日期 |
2013.05.14 |
| 申请人 |
SILICONFILE TECHNOLOGIES INC. |
发明人 |
AHN, HEUI GYUN;AHN, SANG WOOK;LEE, YONG WOON;JUNG, HUY CHAN;JUN, SUNG CHUN |
| 分类号 |
H01L23/34;H01L23/48 |
主分类号 |
H01L23/34 |
| 代理机构 |
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