ENHANCED TRANSISTOR PERFORMANCE OF N-CHANNEL TRANSISTOR BY USING AN ADDITIONAL LAYER ABOVE A DUAL STRESS LINER IN A SEMICONDUCTOR DEVICE

摘要

By forming an additional dielectric material, such as silicon nitride, after patterning dielectric liners of different intrinsic stress, a significant increase of performance of N-channel transistors may be obtained while substantially not contributing to a performance loss of the P-channel transistor.