A SEMICONDUCTOR DEVICE WITH MULTI LEVEL INTERCONNECTS AND METHOD OF FORMING THE SAME

摘要

A semiconductor device and a method of manufacturing the semiconductor device are disclosed. An exemplary semiconductor device includes a substrate which includes a gate structure which separates a source and drain (S/D) feature. The semiconductor device further includes a first dielectric layer formed on a substrate. The first dielectric layer includes a first interconnect structure which electrically in contact with the S/D feature. The semiconductor device further includes a middle layer formed on the first dielectric layer. The middle layer comprises a top surface practically equal to the top surface of the first interconnect structure, and the semiconductor device further includes a second dielectric layer formed on the middle layer. The second dialectic layer includes a second interconnect structure electrically in contact with the first interconnect structure and a third interconnect structure electrically in contact with the gate structure.