| 摘要 |
<p>The invention relates to a photodetector element (3) for infrared light radiation having a given wavelength, including, in a medium (5) that is at least partially transparent to the infrared light radiation to be detected: a layer (7) of a partially absorbent semiconductor material; and a periodic structure (9) spaced apart from the layer (7) of semiconductor material but in the near field thereof, and exciting modes of propagation of said infrared light radiation to be detected that are parallel to said layer (7) of semiconductor material. The photodetector further includes a perimetric electrical contact (13), which surrounds the outline of said photodetector element (3) and extends perpendicularly to the planes defined by the layer (7) of semiconductor material and said periodic structure (9), which is in contact with said layer (7) of semiconductor material, and which also forms an optical mirror for the modes excited by said periodic structure (9).</p> |
